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Hard X-ray Detection Using a Single nm Diameter Nanowire

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Author

Summary, in English

Submicron sized sensors could allow higher resolution in X-ray imaging and diffraction measurements, which are ubiquitous for materials science and medicine. We present electrical measurements of a single 100 nm diameter InP nanowire transistor exposed to hard X-rays. The X-ray induced conductance is over 5 orders of magnitude larger than expected from reported data for X-ray absorption and carrier lifetimes. Time-resolved measurements show very long characteristic lifetimes on the order of seconds, tentatively attributed to long-lived traps, which give a strong amplification effect. As a proof of concept, we use the nanowire to directly image an X-ray nanofocus with submicron resolution.

Publishing year

2014

Language

English

Pages

7071-7076

Publication/Series

Nano Letters

Volume

14

Issue

12

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology

Keywords

  • Nanowires
  • X-rays
  • detector
  • III-V

Status

Published

ISBN/ISSN/Other

  • ISSN: 1530-6992