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A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes

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Author

Summary, in English

In this paper we proposed a method for evaluating a homogeneous broadening (DeltaE(h)) and inhomogeneous broadening (DeltaE(i)) of the resonant energy level width independently by using current-voltage characteristics in double barrier resonant tunneling diodes (DBRTDs). The line shape of the resonant energy broadening is assumed as a convolution of Lorentz function and a Gauss function. Measured transmittance in GaAs0.25P0.75/GaAs DBRTDs grown by MOCVD is well fit to the convolution function. The DeltaE(h), DeltaE(i) were estimated as 4.3[meV] and 1.0 [meV], respectively, where the measured energy-voltage conversion factor 17 is 0.3[eV/V].

Publishing year

2002

Language

English

Pages

363-367

Publication/Series

Compound Semiconductors 2001 (Institute of Physics Conference Series)

Issue

170

Document type

Conference paper

Publisher

IOP Publishing

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Conference name

ISCS 2001

Conference date

2001-10-01 - 2001-10-04

Conference place

Tokyo, Japan

Status

Published

ISBN/ISSN/Other

  • ISSN: 0951-3248