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3-D Integrated Track-and-Hold Circuit Using InAs Nanowire MOSFETs and Capacitors

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Author

Summary, in English

This letter presents a vertical integration scheme where track-and-hold circuits, consisting of a MOSFET in series with a metal-insulator-metal (MIM) capacitor, are successfully fabricated along vertical InAs nanowires. The nanowire MOSFET is used as a switch with varying switch resistance, Rsw, as the gate-source voltage, VGS, is varied. The track-and-hold circuit operation is verified by a sine wave that is properly evaluated by the circuit. In addition, calculations show that the three-dimensional integration reduces the track-and-hold area a factor of 2, as compared with planar MIM capacitor only. With further nanowire pitch reduction, about ten times area saving is projected.

Publishing year

2016-07-01

Language

English

Pages

851-854

Publication/Series

IEEE Electron Device Letters

Volume

37

Issue

7

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • capacitor
  • InAs
  • mixed-signal application
  • MOSFET
  • Nanowire
  • track-and-hold circuit

Status

Published

ISBN/ISSN/Other

  • ISSN: 0741-3106