Growth and segregation of GaAs-AlxIn1-xP core-shell nanowires
Author
Summary, in English
The development of a ternary AlxIn1-xP shell grown around GaAs nanowires epitaxially grown in the [(1) over bar (1) over bar (1) over bar] direction has been studied. Morphology and composition of the shell have been studied using cross-sectional transmission electron microscopy (TEM). The side facets of the shell are found to develop dominant {1 (1) over bar 0} macro facets with small (approx. 5 nm) {1 1 (2) over bar} facets independent of the GaAs core side facets. Phase segregation is observed as AIP developing from the {1 1 (2) over bar} facets, while Al0.5In0.5P is found in the rest of the ternary shell. (C) 2010 Elsevier B.V. All rights reserved.
Publishing year
2010
Language
English
Pages
1755-1760
Publication/Series
Journal of Crystal Growth
Volume
312
Issue
10
Document type
Journal article
Publisher
Elsevier
Topic
- Condensed Matter Physics
- Chemical Sciences
Keywords
- Core-shell nanowire
- HRTEM
- Segregation
- GaAs
- AlxIn1-xP
Status
Published
ISBN/ISSN/Other
- ISSN: 0022-0248