InAs1-xPx Nanowires for Device Engineering
Author
Summary, in English
We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P
concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter
of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution
transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual
heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements
we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2
eV. Finally, homogeneous InAs0.8P0.2 nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at
room temperature.
concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter
of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution
transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual
heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements
we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2
eV. Finally, homogeneous InAs0.8P0.2 nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at
room temperature.
Publishing year
2006
Language
English
Pages
403-407
Publication/Series
Nano Letters
Volume
6
Issue
3
Links
Document type
Journal article
Publisher
The American Chemical Society (ACS)
Topic
- Chemical Sciences
- Condensed Matter Physics
Status
Published
ISBN/ISSN/Other
- ISSN: 1530-6992