Performance evaluation of N-well/P-sub photodiodes in 65nm CMOS process

Summary, in English

This work explores the n-well/p-substrate photodiode in a deep submicron CMOS process. A CMOS chip is designed featuring different structures of the photodiode. When characterized at a wavelength of 850nm DC responsivities between 0.12 and 0.16 A/W and 3-dB bandwidths of about 6 MHz with a roll-off of about 5.5dB/decade are measured. These investigations are very useful in designing the transimpedance amplifier and equalizer for a fully integrated optical receiver. According to the authors’ knowledge it is the first reported study on n-well/p-sub photodiodes in a 65nm CMOS technology.

• Author: Waqas Ahmad; Markus Törmänen; Henrik Sjöland
• Department/s: Department of Electrical and Information Technology; ELLIIT: the Linköping-Lund initiative on IT and mobile communication
• Publishing year: 2013
• Language: English
• Pages: 135-136
• Publication/Series: [Host publication title missing]
• Links: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6621520; http://dx.doi.org/10.1109/ICAIT.2013.6621520
• Document type: Conference paper
• Publisher: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Topic: Electrical Engineering, Electronic Engineering, Information Engineering
• Keywords: photodiodes; optical communication; CMOS technology; optical receivers; photodetectors
• Conference name: 6th IEEE/International Conference on Advanced Infocomm Technology (ICAIT)
• Conference date: 2013-07-06 - 2013-07-09
• Conference place: Hsinchu, Taiwan
• Status: Published
• Project: Distributed antenna systems for efficient wireless systems
• Research group: Analog RF
• ISBN/ISSN/Other: ISBN: 978-1-4799-0464-8