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Modeling of the deposition of stoichiometric Al2O3 using non-arcing dc magnetron sputtering

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Author

  • Karol Macak
  • Thomas Nyberg
  • Peter Macak
  • Maryam Olsson
  • Ulf Helmersson
  • Sören Berg

Summary, in English

dc sputter deposition of stoichiometric Al2O3 is usually difficult due to the formation of an oxidized layer on the target surface, which reduces the deposition rate drastically and causes charge buildup and arcing at the target. To avoid this situation the arrival rate ratio O2/Al must be high enough at the substrate position that a stoichiometric film can form but low enough at the target that a conducting target surface is maintained. We have utilized Monte Carlo simulations to estimate the flux distribution of sputtered particles for different geometries. These results, supplemented by Bergs’ standard steady state model for the reactive sputtering process, made it possible to predict the composition at different surfaces in the processing chamber. Experimental studies were carried out for several different target-to-substrate distances and a range of sputtering gas pressures. The results show that the process can be tailored to achieve stoichiometric Al2O3 at the substrates while keeping the target in the metallic state. This is achieved by providing a high enough inert gas pressure or large enough target-to-substrate distance. Thick stoichiometric Al2O3films were successfully deposited at these conditions with low or no arcing during deposition. A considerable back-deposition of Al on to the noneroded part of the target keeping the surfaces conducting is the key factor for the reduction of arcing.

Publishing year

1998

Language

English

Pages

1286-1286

Publication/Series

Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films

Volume

16

Issue

3

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Social Sciences Interdisciplinary
  • Other Engineering and Technologies not elsewhere specified

Status

Published

ISBN/ISSN/Other

  • ISSN: 1520-8559