Remnant magnetoresistance in ferromagnetic (Ga,Mn)As nanostructures
Author
Summary, in English
The authors show a magnetoresistive effect that appears in a lithographically shaped, three-arm nanostructure fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different pairs of arms in the structure, is revealed as a dependence of zero-field resistance on the direction of the previously applied magnetic field. This effect could allow designing devices with unique switching and memory properties.
Department/s
Publishing year
2007
Language
English
Publication/Series
Applied Physics Letters
Volume
90
Issue
5
Document type
Journal article
Publisher
American Institute of Physics (AIP)
Topic
- Natural Sciences
- Physical Sciences
Status
Published
ISBN/ISSN/Other
- ISSN: 0003-6951