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Controlling the Abruptness of Axial Heterojunctions in III-V Nanowires: Beyond the Reservoir Effect

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Author

Summary, in English

Heterostructure nanowires have many potential applications due to the avoidance of interface defects by lateral strain relaxation. However, most heterostructure semiconductor nanowires suffer from persistent interface compositional grading, normally attributed to the dissolution of growth species in the common alloy seed particles. Although progress has been made for some material systems, most binary material combinations remain problematic due to the interaction of growth species in the alloy. In this work we investigate the formation of interfaces in InAs-GaAs heterostructures experimentally and theoretically and demonstrate a technique to attain substantially sharper interfaces. We show that by pulsing the Ga source during heterojunction formation, In is pushed out before GaAs growth initiates, greatly reducing In carry-over. This procedure will be directly applicable to any nanowire system with finite nonideal solubility of growth species in the alloy seed particle and greatly improve the applicability of these structures in future devices.

Publishing year

2012

Language

English

Pages

3200-3206

Publication/Series

Nano Letters

Volume

12

Issue

6

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology

Keywords

  • Nanowire
  • heterostructure
  • III-V semiconductor
  • MOVPE
  • XEDS

Status

Published

ISBN/ISSN/Other

  • ISSN: 1530-6992