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Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire

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Author

Summary, in English

We compare and discuss the two most commonly used electrical characterization techniques for nanowires (NWs). In a novel single-NW device, we combine Hall effect and back-gated and top-gated field effect measurements and quantify the carrier concentrations in a series of sulfur-doped InP NWs. The carrier concentrations from Hall effect and field effect measurements are found to correlate well when using the analysis methods described in this work. This shows that NWs can be accurately characterized with available electrical methods, an important result toward better understanding of semiconductor NW doping.

Publishing year

2016

Language

English

Pages

205-211

Publication/Series

Nano Letters

Volume

16

Issue

1

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology
  • Condensed Matter Physics

Keywords

  • Nanowire
  • doping
  • Hall effect
  • field effect
  • electrical characterization

Status

Published

ISBN/ISSN/Other

  • ISSN: 1530-6992