Transport Gap Opening and High On-Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries.

Summary, in English

Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on-off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on-off ratio of 10(4) by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More remarkably, the transport gap of ∼0.4 eV persists even at 100 K. Our results show the feasibility of creating new electronic nanostructures with high on-off current ratios using graphene on cubic-SiC.

• Author: Han-Chun Wu; Alexander N Chaika; Tsung-Wei Huang; Askar Syrlybekov; Mourad Abid; Victor Yu Aristov; Olga V Molodtsova; Sergey V Babenkov; D Marchenko; Jaime Sánchez-Barriga; Partha Sarathi Mandal; Andrei Yu Varykhalov; Yuran Niu; Barry E Murphy; Sergey A Krasnikov; Olaf Lübben; Jing Jing Wang; Huajun Liu; Li Yang; Hongzhou Zhang; Mohamed Abid; Yahya T Janabi; Sergei N Molotkov; Ching-Ray Chang; Igor Shvets
• Department/s: MAX IV Laboratory
• Publishing year: 2015
• Language: English
• Pages: 8967-8975
• Publication/Series: ACS Nano
• Volume: 9
• Issue: 9
• Links: http://dx.doi.org/10.1021/acsnano.5b02877
• Document type: Journal article
• Publisher: The American Chemical Society (ACS)
• Topic: Nano Technology
• Status: Published
• ISBN/ISSN/Other: ISSN: 1936-086X