High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current

Summary, in English

We report on In_0.85Ga_0.15As MOSFETs utilizing selectively grown lateral nanowires as the channel. These devices exhibit ON-current of I_ON = 565μ/Aμm at I_OFF =100 nA/μm and V_D=0.5 V, which is higher than all other reported values for III-V FETs. This is enabled by a transconductance of 2.9 mS/μm and a minimum SS_sat of 77 mV/decade. A ballistic top-of-the-barrier model is used to model these devices and to predict their ultimate performance, which is approximately twice that of the fabricated devices.

• Author: Cezar B. Zota; Lars Erik Wernersson; Erik Lind
• Department/s: Department of Electrical and Information Technology; NanoLund: Centre for Nanoscience
• Publishing year: 2016-10-01
• Language: English
• Pages: 1264-1267
• Publication/Series: IEEE Electron Device Letters
• Volume: 37
• Issue: 10
• Full text: - 570 kB; Download statistics
• Links: http://dx.doi.org/10.1109/LED.2016.2602841
• Document type: Journal article
• Publisher: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Topic: Communication Systems
• Keywords: III-V; InGaAs; MOSFET; nanowire
• Status: Published
• ISBN/ISSN/Other: ISSN: 0741-3106