The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Dependence of Curie temperature on the thickness of epitaxial (Ga,Mn)As film

På svenska

Author

  • BS Sorensen
  • Janusz Sadowski
  • SE Andresen
  • PE Lindelof

Summary, in English

We present the magnetotransport properties of very thin (5-15 nm) single (Ga,Mn)As layers grown by low-temperature molecular beam epitaxy. A lower (Ga,Mn)As thickness limit of 5 nm for the ferromagnetic phase and the dependence of the Curie temperature on (Ga,Mn)As thickness are determined from electrical-transport measurements. The Curie temperature is determined to be 97 K for the thinnest ferromagnetic sample and is found to decrease for increasing layer thickness. A carrier density of 7.1x10(20) cm(-3) for the 5 nm thick (Ga,Mn)As layer is determined from Hall measurements. Differences between magnetotransport properties of thick and thin (Ga,Mn)As layers are observed and discussed.

Department/s

Publishing year

2002

Language

English

Publication/Series

Physical Review B (Condensed Matter and Materials Physics)

Volume

66

Issue

23

Document type

Journal article

Publisher

American Physical Society

Topic

  • Natural Sciences
  • Physical Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 1098-0121