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Creation of MnAs nanoclusters during processing of GaMnAs

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Author

  • J. Bak-Misiuk
  • J. Z. Domagala
  • P. Romanowski
  • E. Dynowska
  • E. Lusakowska
  • A. Misiuk
  • W. Paszkowicz
  • Janusz Sadowski
  • A. Barcz
  • W. Caliebe

Summary, in English

GaMnAs layers on (0 0 1)-oriented GaAs substrates were grown by the molecular beam epitaxy (MBE) method. Structural properties of samples processed at up to 920 K under hydrostatic Ar pressure up to 1.1 GPa were investigated by X-ray, secondary ion mass spectroscopy and atomic force microscopy methods. The sign of strain (compressive or tensile) of the GaMnAs layers, related to a creation of MnAs nanoclusters, is found to be dependent on processing conditions and on primary structure defects, whereas it was independent of Mn concentration. An influence of the defects structure in as-grown samples on the strain state of processed GaMnAs layers is discussed. (C) 2009 Elsevier Ltd. All rights reserved.

Department/s

Publishing year

2009

Language

English

Pages

116-119

Publication/Series

Radiation Physics And Chemistry

Volume

78

Document type

Conference paper

Publisher

Elsevier

Topic

  • Natural Sciences
  • Physical Sciences

Keywords

  • Nanocluster
  • Strain
  • X-ray diffraction
  • Thin layer
  • GaMnAs
  • Annealing
  • High pressure

Conference name

9th International School and Symposium on Synchrotron Radiation in Natural Science (ISSRNS-9)

Conference date

2008-06-15 - 2008-06-20

Conference place

Ameliowka, Poland

Status

Published

ISBN/ISSN/Other

  • ISSN: 0969-806X