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Mn enriched surface of annealed (GaMn)As layers annealed under arsenic capping

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Author

  • M. Adell
  • J. Adell
  • L. Ilver
  • J. Kanski
  • J. Sadowski
  • J. Z. Domagala

Summary, in English

Using synchrotron radiation based spectroscopic methods we have investigated the surface modifications of Ga1-x Mnx As layers due to post growth annealing under amorphous arsenic capping layers. It is established that there is a clear increase of the Mn concentration at the surface after annealing. This is ascribed to a reaction between diffusing Mn interstitials and the As capping. The reacted surface is smooth and well ordered with a 1×2 reconstruction. All data indicate that the annealed (GaMn)As is terminated by a monolayer MnAs in zinc-blende structure.

Publishing year

2007-02-22

Language

English

Publication/Series

Physical Review B (Condensed Matter and Materials Physics)

Volume

75

Issue

5

Document type

Journal article

Publisher

American Physical Society

Status

Published

ISBN/ISSN/Other

  • ISSN: 1098-0121