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Tailored Formation of N-Doped Nanoarchitectures by Diffusion-Controlled on-Surface (Cyclo)-Dehydrogenation of Heteroaromatics

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Author

  • Anna Lisa Pinardi
  • Gonzalo Otero-Irurueta
  • Irene Palacio
  • Jose Ignacio Martinez
  • Carlos Sanchez-Sanchez
  • Marta Tello
  • Celia Rogero
  • Albano Cossaro
  • Alexei Preobrajenski
  • Berta Gomez-Lor
  • Andrej Jancarik
  • Irena G. Stara
  • Ivo Stary
  • M. Francisca Lopez
  • Javier Mendez
  • Jose Angel Martin-Gago
Show all

Summary, in English

Surface-assisted cyclodehydrogenation and dehydrogenative polymerization of polycyclic (hetero)aromatic hydrocarbons (PAH) are among the most important strategies for bottom-up assembly of new nanostructures from their molecular building blocks. Although diverse compounds have been formed in recent years using this methodology, a limited knowledge on the molecular machinery operating at the nanoscale has prevented a rational control of the reaction outcome. We show that the strength of the PAH-substrate interaction rules the competitive reaction pathways (cyclodehydrogenation versus dehydrogenative polymerization). By controlling the diffusion of N-heteroaromatic precursors, the on-surface dehydrogenation can lead to monomolecular triazafullerenes and diazahexabenzocoronenes (N-doped nanographene), to N-doped oligomeric or polymeric networks, or to carbonaceous monolayers. Governing the on-surface dehydrogenation process is a step forward toward the tailored fabrication of molecular 2D nanoarchitectures distinct from graphene and exhibiting new properties of fundamental and technological interest.

Department/s

Publishing year

2013

Language

English

Pages

3676-3684

Publication/Series

ACS Nano

Volume

7

Issue

4

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology

Keywords

  • surface-assisted dehydrogenation
  • N-doped nanographene
  • heteroaromatic
  • polymer
  • STM
  • surface diffusion
  • bottom-up assembling

Status

Published

ISBN/ISSN/Other

  • ISSN: 1936-086X