A 3.4mW 65nm CMOS 5th Order Programmable Active-RC Channel Select Filter for LTE Receivers

Summary, in English

In this work a low power 5th order chebyshev

active-RC low pass filter that meets Rel-8 LTE receiver

requirements has been designed with programmable bandwidth

and overshoot. Designed for a homodyne LTE receiver,

filter bandwidths from 700kHz to 10MHz are supported.

The bandwidth of the operational amplifiers is improved

using a novel phase enhancement technique. The filter was

implemented in 65nm CMOS technology with a core area

of 0.29mm2. Its total current consumption is 2.83mA from a

1.2V supply. The measured input referred noise is 39nV/

√

Hz,

the in-band IIP3 is 21.5dBm, at the band-edge the IIP3

is 20.7dBm, the out-of-band IIP3 is 20.6dBm, and the

compression point is 0dBm.

• Author: Mohammed Abdulaziz; Anders Nejdel; Markus Törmänen; Henrik Sjöland
• Department/s: Department of Electrical and Information Technology; ELLIIT: the Linköping-Lund initiative on IT and mobile communication
• Publishing year: 2013
• Language: English
• Pages: 217-220
• Publication/Series: IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2013
• Links: http://dx.doi.org/10.1109/RFIC.2013.6569565
• Document type: Conference paper
• Publisher: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Topic: Electrical Engineering, Electronic Engineering, Information Engineering
• Keywords: Active filters; low pass filters; low power electronics; CMOS technology; Operational Amplifiers.
• Conference name: RFIC 2013
• Conference date: 2013-06-02
• Conference place: Seattle, United States
• Status: Published
• Research group: Analog RF
• ISBN/ISSN/Other: ISSN: 1529-2517; ISBN: 978-1-4673-6059-3