As3d core level studies of (GaMn)As annealed under As capping
Author
Summary, in English
The surface of a Ga0.95Mn0.05As layer subjected to low temperature annealing under As capping has been studied by core level photoemission with focus on As3d spectrum. By detailed comparison with the surface of pure GaAs subjected to the same surface treatment, the As spectral component of the reacted surface layer has been identified. The relative intensity of this component is consistent with the notion of an MnAs monolayer terminating the annealed (GaMn)As surface. (C) 2009 Elsevier B.V. All rights reserved.
Department/s
Publishing year
2010
Language
English
Pages
125-128
Publication/Series
Surface Science
Volume
604
Issue
2
Document type
Journal article
Publisher
Elsevier
Topic
- Physical Sciences
- Natural Sciences
Keywords
- Post-growth annealing
- (GaMn)As
- Core level photoemission
- As3d spectrum
Status
Published
ISBN/ISSN/Other
- ISSN: 0039-6028