Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

Summary, in English

Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman

scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets on the top of the nanowires. Optical and transport measurements revealed that the limit of the Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping

level, i.e., it is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with

the photoluminescence measurements which showed the presence of Mn2+ acceptors located at Ga sites of the GaAs host lattice of the nanowires. An anomalous temperature dependence of the photoluminescence related to excitons was demonstrated for Mn-doped GaAs nanowires.

• Author: Katarzyna Gas; Janusz Sadowski; Takeshi Kasama; Aloyzas Siusys; Wojciech Zaleszczyk; Tomasz Wojciechowski; Jean-François Morhange; Abdulmenaf Altintas; Hongqi Xu
• Department/s: MAX IV Laboratory; Solid State Physics; NanoLund: Centre for Nanoscience
• Publishing year: 2013
• Language: English
• Pages: 7410-7418
• Publication/Series: Nanoscale
• Volume: 5
• Issue: 16
• Links: http://dx.doi.org/10.1039/c3nr01145c
• Document type: Journal article
• Publisher: Royal Society of Chemistry
• Topic: Nano Technology
• Keywords: Nanowires; molecular beam epitaxy; spintronics
• Status: Published
• ISBN/ISSN/Other: ISSN: 2040-3372