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High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires

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Author

Summary, in English

We have prepared GaAs wurtzite (WZ)-zinc blende (ZB) nanowire heterostructures by Au particle-assisted metal-organic vapor phase epitaxy (MOVPE) growth. Superior crystal quality of both the transition region between WZ and ZB and of the individual segments themselves was found for WZ-ZB single heterostructures. Pure crystal phases were achieved and the ZB segments were found to be free of any stacking defects, whereas the WZ sections showed a maximum stacking fault density of 20 mu m(-1). The hexagonal cross-sectional wires are terminated by -type side facets for the WZ segment and predominantly {110}-type side facets for the ZB part of the wire. A diameter increase occurred after the transition from WZ to ZB. Additionally, facets of the -type as well as downwards-directed overgrowth of the WZ segments were formed at the WZ to ZB transition to compensate for the observed diameter increase and facet rotation. In the case of WZ-ZB multiple heterostructures, we observed slightly higher densities of stacking faults and twin planes compared to single heterostructures.

Publishing year

2012

Language

English

Pages

470-476

Publication/Series

Nano Reseach

Volume

5

Issue

7

Document type

Journal article

Publisher

Springer

Topic

  • Condensed Matter Physics
  • Chemical Sciences

Keywords

  • Nanowires
  • GaAs
  • heterostructure
  • polytypism
  • metal-organic vapor phase
  • epitaxy (MOVPE)-growth

Status

Published

ISBN/ISSN/Other

  • ISSN: 1998-0124