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Effect of misfit strain in (Ga,Mn)(Bi,As) epitaxial layers on their magnetic and magneto-transport properties

På svenska

Author

  • K. Levchenko
  • T. Andrearczyk
  • J. Z. Domagała
  • J. Sadowski
  • L. Kowalczyk
  • M. Szot
  • T. Figielski
  • T. Wosiński

Summary, in English

Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated. High-resolution X-ray diffraction, applied to characterize the structural quality and misfit strain in the layers, proved that the layers were fully strained to the GaAs substrate or (In,Ga)As buffer under compressive or tensile strain, respectively. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the layers has been shown to enhance the hole concentration and the Curie temperature in the layers.

Department/s

Publishing year

2016-01-01

Language

English

Pages

90-93

Publication/Series

Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics

Volume

129

Issue

1

Document type

Journal article

Publisher

Institute of Physics, Polish Academy of Sciences

Topic

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 0587-4246