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III-V Nanowire Synthesis by Use of Electrodeposited Gold Particles.

Author

Summary, in English

Semiconductor nanowires are great candidates for building novel electronic devices. Considering the cost of fabricating such devices, substrate reuse and gold consumption are the main concerns. Here we report on implementation of high throughput gold electrodeposition for selective deposition of metal seed particles in arrays defined by lithography for nanowire synthesis. By use of this method, a reduction in gold consumption by a factor of at least 300 was achieved, as compared to conventional thermal evaporation for the same pattern. Because this method also facilitates substrate reuse, a significantly reduced cost of the final device is expected. We investigate the morphology, crystallography, and optical properties of InP and GaAs nanowires grown from electrodeposited gold seed particles and compare them with the properties of nanowires grown from seed particles defined by thermal evaporation of gold. We find that nanowire synthesis, as well as the material properties of the grown nanowires are comparable and quite independent of the gold deposition technique. On the basis of these results, electrodeposition is proposed as a key technology for large-scale fabrication of nanowire-based devices.

Publishing year

2015

Language

English

Pages

134-138

Publication/Series

Nano Letters

Volume

15

Issue

1

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology
  • Condensed Matter Physics
  • Other Physics Topics

Status

Published

Project

  • Integration of III-V nanowires with (001) substrates

ISBN/ISSN/Other

  • ISSN: 1530-6992