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Simultaneous growth mechanisms for Cu-seeded InP nanowires

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Author

Summary, in English

We report on epitaxial growth of InP nanowires (NWs) from Cu seed particles by metal-organic vapor phase epitaxy (MOVPE). Vertically-aligned straight nanowires can be achieved in a limited temperature range between 340 A degrees C and 370 A degrees C as reported earlier. In this paper we present the effect of the V/III ratio on nanowire morphology, growth rate, and particle configuration at a growth temperature of 350 A degrees C. Two regimes can be observed in the investigated range of molar fractions. At high V/III ratios nanowires grow from a solid Cu2In particle. At low V/III ratios, nanowire growth from two particle types occurs simultaneously: Growth from solid Cu2In particles, and significantly faster growth from In-rich particles. We discuss a possible growth mechanism relying on a dynamic interplay between vapor-liquid-solid (VLS) and vapor-solid-solid (VSS) growth. Our results bring us one step closer to the replacement of Au as seed particle material as well as towards a deeper understanding of particle-assisted nanowire growth.

Publishing year

2012

Language

English

Pages

297-306

Publication/Series

Nano Reseach

Volume

5

Issue

5

Document type

Journal article

Publisher

Springer

Topic

  • Condensed Matter Physics
  • Atom and Molecular Physics and Optics

Keywords

  • Nanowires
  • MOVPE
  • MOCVD
  • epitaxy
  • InP
  • Cu seed particle

Status

Published

ISBN/ISSN/Other

  • ISSN: 1998-0124