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Optically detected extended X-ray absorption fine structure study of InGaN/GaN single quantum wells

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Author

  • N. Rigopoulos
  • B. Hamilton
  • G. J. Davies
  • B. M. Towlson
  • N. R J Poolton
  • P. Dawson
  • D. M. Graham
  • M. J. Kappers
  • C. J. Humphreys
  • S. Carlson

Summary, in English

We have investigated the local atomic environment of the Ga atoms in an InxGa1-xN single quantum well structure using Optically Detected Extended X-ray Absorption Fine Structure (OD-EXAFS). A comparison of the OD-EXAFS data with a theoretical model shows the technique to be site selective for this particular structure and reveals that the quantum well emission originates from regions with x=0.15.

Department/s

Publishing year

2007

Language

English

Pages

1503-1504

Publication/Series

AIP Conference Proceedings

Volume

893

Document type

Conference paper

Keywords

  • EXAFS
  • InGaN
  • Quantum well

Conference name

28th International Conference on the Physics of Semiconductors, ICPS 2006

Conference date

2006-07-24 - 2006-07-28

Conference place

Vienna, Austria

Status

Published

ISBN/ISSN/Other

  • ISBN: 9780735403970