Selective etching of III-V nanowires for molecular junctions
Author
Summary, in English
Selective etching of heterostructure III-V nanowires can be used to form tips and narrow gaps simultaneously on multiple nanowires on a single wafer. In this study we tested bromine based etching of gallium arsenide segments in gallium phosphide nanowires. Depending on the etchant and etching conditions, a variety of gap topologies and tip-like structures were observed. The method is compatible with wafer-scale integration of molecular electronics within existing silicon technology, offering control of materials composition, morphology and electronic band gap of the electrodes that can be made so small they might be used as contact electrodes for individual molecules. (C) 2008 Elsevier B.V. All rights reserved.
Department/s
Publishing year
2008
Language
English
Pages
1179-1181
Publication/Series
Microelectronic Engineering
Volume
85
Issue
5-6
Document type
Journal article
Publisher
Elsevier
Topic
- Condensed Matter Physics
Keywords
- molecular junction
- III-V
- nanowires
- selective etching
Status
Published
ISBN/ISSN/Other
- ISSN: 1873-5568