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Intrinsic Performance of InAs Nanowire Capacitors

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Author

Summary, in English

The intrinsic properties of vertical InAs nanowire (NW) capacitors are investigated. The band structure is simulated using a Schrödinger-Poisson solver, taking the conduction band nonparabolicity into account. This is combined with a distributed RC model to simulate the current-voltage characteristics. It is found that the influence from the nonparabolicity is substantial for devices with a small nanowire diameter, resulting in an increased carrier concentration, a shift in the threshold voltage, and a higher intrinsic capacitance. These NW capacitors may be a suitable alternative in high frequency applications approaching 100 GHz, while maintaining a quality factor above 100.

Publishing year

2014

Language

English

Pages

452-459

Publication/Series

IEEE Transactions on Electron Devices

Volume

61

Issue

2

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Nano Technology
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • nanowires (NWs)
  • modeling
  • Capacitor
  • InAs

Status

Published

Project

  • EIT_WWW Wireless with Wires

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0018-9383