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Effects of crystal phase mixing on the electrical properties of InAs nanowires

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Author

Summary, in English

We report a systematic study of the relationship between crystal quality and electrical properties of InAs nanowires grown by MOVPE and MBE, with crystal structure varying from wurtzite to zinc blende. We find that mixtures of these phases can exhibit up to 2 orders of magnitude higher resistivity than single-phase nanowires, with a temperature-activated transport mechanism. However, it is also found that defects in the form of stacking faults and twin planes do not significantly affect the resistivity. These findings are important for nanowire-based devices, where uncontrolled formation of particular polytype mixtures may lead to unacceptable device variability.

Publishing year

2011

Language

English

Pages

2424-2429

Publication/Series

Nano Letters

Volume

11

Issue

April 29, 2011

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology

Status

Published

Research group

  • Digital ASIC
  • Nano

ISBN/ISSN/Other

  • ISSN: 1530-6992