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Epitaxial InP nanowire growth from Cu seed particles

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Author

Summary, in English

Cu-seeded epitaxial growth of vertically aligned InP nanowires is reported for the first time. The nanowires were grown at temperatures between 290 and 420 degrees C by metal-organic vapor phase epitaxy (MOVPE) from particles formed from Cu thin films. In the temperature range of 340-370 degrees C high yields of vertically aligned nanowires could be achieved. The nanowire crystal structure and the particle composition were investigated by TEM and XEDS. The nanowires showed a zinc blende structure and a post-growth particle composition of 64 at% Cu and 36 at% In. (C) 2010 Elsevier B.V. All rights reserved.

Publishing year

2011

Language

English

Pages

134-137

Publication/Series

Journal of Crystal Growth

Volume

315

Issue

1

Document type

Conference paper

Publisher

Elsevier

Topic

  • Condensed Matter Physics
  • Chemical Sciences

Keywords

  • Nanostructures
  • Nanowires
  • Low-pressure metal-organic vapor phase
  • epitaxy
  • Semiconducting III-V materials
  • Semiconducting indium phosphide

Conference name

15th international conference on metal organic vapor phase epitaxy, 2010

Conference date

2010-05-23 - 2010-05-28

Conference place

Lake Tahoe, United States

Status

Published

ISBN/ISSN/Other

  • ISSN: 0022-0248