Resonant Tunneling Permeable Base Transistor for RF applications

Summary, in English

A technique is developed to embed tungsten inside semiconductors, with the possibility to combine the metallic elements and semiconductor heterostructure with nm-precision. This technique enables to fabricate a very high quality permeable base type of transistor. A resonant tunneling permeable base transistor, RT-PBT is fabricated by directly integrating a tungsten grating 30 nm above a pseudomorphic RTD. Double barrier heterostructure (AlGaAs/InGaAs) is grown by molecular beam epitaxy and the wafer is patterned by e-beam lithography to form the grating. Common collector current-voltage characteristics were measured at room temperature

• Author: Erik Lind; Peter Lindström; Lars-Erik Wernersson
• Department/s: Department of Electrical and Information Technology; Solid State Physics
• Publishing year: 2003
• Language: English
• Pages: 487-488
• Publication/Series: 2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741)
• Links: http://dx.doi.org/10.1109/ISDRS.2003.1272209
• Document type: Conference paper
• Publisher: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Topic: Electrical Engineering, Electronic Engineering, Information Engineering; Condensed Matter Physics
• Keywords: molecular beam epitaxy; double barrier heterostructure; room temperature; semiconductor heterostructure; metallic elements; resonant tunneling permeable base transistor; tungsten; W; AlGaAs-InGaAs; 30 nm; 293 to 298 K; electron beam lithography
• Conference name: 2003 International Semiconductor Device Research Symposium
• Conference date: 2003-12-10 - 2003-12-12
• Conference place: Washington, DC, United States
• Status: Published
• ISBN/ISSN/Other: ISBN: 0-7803-8139-4