The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

In-situ manipulations and electrical measurements of III-V nanowhiskers with TEM-STM

På svenska

Author

Summary, in English

A scanning tunnelling microscope (STM) mounted in a sample holder for a transmission electron microscope (TEM), a TEM-STM, have been used for in-situ electrical measurements of semiconductor nano whiskers. The device enables measurements and manipulations of nano structures while observing them in a TEM

Publishing year

2002

Language

English

Publication/Series

7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science

Document type

Conference paper

Publisher

Lund University

Topic

  • Chemical Sciences

Keywords

  • transmission electron microscopy
  • STM
  • scanning tunnelling microscopy
  • III-V nanowhiskers
  • in situ manipulations
  • electrical measurements
  • TEM
  • semiconductor nanowhiskers
  • nano structures
  • InAs/InP nanowhisker
  • InAs-InP

Conference name

Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)

Conference date

2002-06-24 - 2002-06-28

Conference place

Malmö, Sweden

Status

Published