Line shape and composition of the In 3d(5/2) core-level photoemission for the interface analysis of In-containing III-V semiconductors

Summary, in English

The In 3d(5/2) photoelectron spectroscopy peak has been widely used to determine the interface structures of In-containing III-V device materials (e.g., oxidation states). However, an unclear parameter affecting the determination of the energy shifts and number of the core-level components, and therefore, the interpreted interface structure and composition, is still the intrinsic In 3d(5/2) peak line shape. It is undecided whether the line shape is naturally symmetric or asymmetric for pure In-containing III-V compounds. By using high-resolution photoelectron spectroscopy, we show that the In 3d(5/2) asymmetry arising from the emission at high binding-energy tail is not an intrinsic property of InAs, InP, InSb and InGaAs. Furthermore, it is shown that asymmetry of In 3d(5/2) peaks of pure III-V's originates from the natural surface reconstructions which cause the coexistence of slightly shifted In 3d(5/2) components with the symmetric peak shape and dominant Lorentzian broadening. (C) 2015 Elsevier B.V. All rights reserved.

• Author: J. Makela; M. Tuominen; M. Kuzmin; M. Yasir; J. Lang; M. P. J. Punkkinen; P. Laukkanen; K. Kokko; Karina Schulte; Jacek Osiecki; R. M. Wallace
• Department/s: MAX IV Laboratory
• Publishing year: 2015
• Language: English
• Pages: 371-375
• Publication/Series: Applied Surface Science
• Volume: 329
• Links: http://dx.doi.org/10.1016/j.apsusc.2014.12.155
• Document type: Journal article
• Publisher: Elsevier
• Topic: Natural Sciences; Physical Sciences
• Keywords: Line shape; III-V semiconductor; Photoelectron spectroscopy; Interfacial; analysis
• Status: Published
• ISBN/ISSN/Other: ISSN: 1873-5584