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III-V Nanowire MOSFETs in RF-Applications

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Author

Summary, in English

InAs nanowires have been used to fabricate high-performance MOSFETs that have been integrated into small-scale RF-circuits. We describe the strategy for the design of the transistor architecture and present data for the DC and high-frequency performance. Studies of the 1/f-noise show competitive normalized noise spectral density although it suggests the presence of defects within the high-k film that affect the number of carriers in the transistor channel. These transistors have been used in single-balanced down-conversion mixers operating up to a few GHz.

Publishing year

2014

Language

English

Pages

69-73

Publication/Series

ECS Transactions

Volume

64

Issue

17

Document type

Conference paper

Publisher

Electrochemical Society

Topic

  • Communication Systems

Conference name

Symposium on State-of-the-Art Program on Compound Semiconductors 56 (SOTAPOCS) held during the 226th Meeting of the Electrochemical-Society

Conference date

2014-10-05 - 2014-10-09

Conference place

Cancun, Mexico

Status

Published

ISBN/ISSN/Other

  • ISSN: 1938-6737
  • ISSN: 1938-5862