Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films
Author
Summary, in English
We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As-GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin. (C) 2003 American Institute of Physics.
Department/s
Publishing year
2003
Language
English
Pages
2287-2289
Publication/Series
Applied Physics Letters
Volume
82
Issue
14
Document type
Journal article
Publisher
American Institute of Physics (AIP)
Topic
- Physical Sciences
- Natural Sciences
Status
Published
ISBN/ISSN/Other
- ISSN: 0003-6951