The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Narrow photoemission lines from graphite valence states

På svenska

Author

Summary, in English

Valence-band photoelectron angular distributions, measured in the photon energy range 20-150 eV, are obtained from crystalline graphite overlayers prepared by heating SiC(0001) and from a graphite natural single crystal. The dispersion of the valence bands for the overlayers agrees well with that of the single crystal. The valence electrons have binding energies, which agree with LDA calculations if the calculated binding energies are multiplied by a factor of 1.13. The upper sigma state at Gamma and states near the Fermi level at the zone corners give quite narrow emission lines. Since the widths are on par with that of the C 1s level the lines are of interest as an alternative to the core line when graphite is used as substrate for adsorption or absorption studies.

Department/s

Publishing year

2002

Language

English

Publication/Series

Physical Review B (Condensed Matter and Materials Physics)

Volume

66

Issue

23

Document type

Journal article

Publisher

American Physical Society

Topic

  • Natural Sciences
  • Physical Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 1098-0121