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In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V

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Author

Publishing year

2014

Language

English

Pages

209-210

Publication/Series

2014 72nd Annual Device Research Conference (DRC)

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

72nd Annual Device Research Conference (DRC)

Conference date

2014-06-22 - 2014-06-25

Status

Published

ISBN/ISSN/Other

  • ISSN: 1548-3770