High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

Summary, in English

We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for interband tunneling without a barrier, leading to high ON-current levels. We report a maximum drive current of 310 μA/μm at Vds = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at Vds = 300 mV, which are normalized to the nanowire circumference at the axial heterojunction.

• Author: Anil Dey; Mattias Borg; Bahram Ganjipour; Martin Ek; Kimberly Dick Thelander; Erik Lind; Claes Thelander; Lars-Erik Wernersson
• Department/s: Department of Electrical and Information Technology; Solid State Physics; Centre for Analysis and Synthesis; NanoLund: Centre for Nanoscience
• Publishing year: 2013
• Language: English
• Pages: 211-213
• Publication/Series: IEEE Electron Device Letters
• Volume: 34
• Issue: 2
• Full text: - 4 MB; Download statistics
• Links: http://dx.doi.org/10.1109/LED.2012.2234078
• Document type: Journal article
• Publisher: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Topic: Condensed Matter Physics; Electrical Engineering, Electronic Engineering, Information Engineering
• Keywords: Broken gap; GaSb; III–V; InAs; tunnel field-effect transistors (TFETs)
• Status: Published
• Research group: Nano
• ISBN/ISSN/Other: ISSN: 0741-3106