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Extraction of oxide traps in III-V MOSFETs using RF transconductance measurements

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Author

Summary, in English

We here present simulations of the effect of border traps on the behavior of a III-V FET's transconductance with respect to frequency. We also compare simulations with a recently developed analytical model for extracting the border trap distribution through measurements of the transconductance, find good agreement between the extracted and simulated transconductance.

Publishing year

2013

Language

English

Pages

415-419

Publication/Series

ECS Transactions

Volume

52

Issue

1

Document type

Conference paper

Publisher

Electrochemical Society

Topic

  • Condensed Matter Physics

Conference name

China Semiconductor Technology International Conference (CSTIC)

Conference date

2013-03-17 - 2013-03-18

Conference place

Shanghai, China

Status

Published

ISBN/ISSN/Other

  • ISSN: 1938-5862
  • ISSN: 1938-6737