Single InP/GaInP quantum dots studied by scanning tunneling microscopy and scanning tunneling microscopy induced luminescence
Author
Summary, in English
We have studied the optical and structural properties of single, self-assembled InP quantum dots (QDs) overgrown with nominally 5 nm of GaInP, using an ultrahigh-vacuum scanning tunneling microscope (STM) operating at low temperatures. The STM is combined with an optical detection system, which allows us to detect the emission from individual quantum dots with high spatial resolution. We find that the InP QDs act as nucleation points for the GaInP overgrowth, where the strain induced by the overlayer give rise to a QD emission around 1.46 eV. (C) 2002 American Institute of Physics.
Department/s
Publishing year
2002
Language
English
Pages
494-496
Publication/Series
Applied Physics Letters
Volume
80
Issue
3
Document type
Journal article
Publisher
American Institute of Physics (AIP)
Topic
- Condensed Matter Physics
Status
Published
ISBN/ISSN/Other
- ISSN: 0003-6951