Three-dimensional integrated resonant tunneling transistor with multiple peaks

Summary, in English

A resonant tunneling transistor was manufactured by integrating a self-aligned metallic gate 30 nm above and 100 nm below resonant tunneling diodes. The Schottky depletion around the gate controls the current to a confined vertical channel with a conduction area in the range of 100x100 nm. Due to the three-dimensional asymmetric placement of the gate with respect to the tunneling diodes, modulation of both the peak voltage and peak current was achieved.

• Author: Erik Lind; Ines Pietzonka; Peter Lindström; Werner Seifert; Lars-Erik Wernersson
• Department/s: Department of Electrical and Information Technology; Solid State Physics
• Publishing year: 2002
• Language: English
• Pages: 1905-1907
• Publication/Series: Applied Physics Letters
• Volume: 81
• Issue: 10
• Links: http://dx.doi.org/10.1063/1.1505748
• Document type: Journal article
• Publisher: American Institute of Physics (AIP)
• Topic: Electrical Engineering, Electronic Engineering, Information Engineering; Condensed Matter Physics
• Status: Published
• ISBN/ISSN/Other: ISSN: 0003-6951