Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy

Summary, in English

We present a synchrotron-based XPS investigation on the interface between InAs and Al2O3 or HfO2 layers, deposited by ALD at different temperatures, for InAs substrates with different surface orientations as well as for InAs nanowires. We reveal the composition of the native Oxide and how the high-k layer deposition reduces Oxide components. We demonstrate some of the advantages in using synchrotron radiation revealing the variation in Oxide composition as a function of depth into the subsurface region and how we can indentify Oxides even on nanowires covering only a small fraction

of the surface.

• Author: Rainer Timm; Martin Hjort; Alexander Fian; Claes Thelander; Erik Lind; Jesper N Andersen; Lars-Erik Wernersson; Anders Mikkelsen
• Department/s: Synchrotron Radiation Research; Department of Physics; NanoLund: Centre for Nanoscience
• Publishing year: 2011
• Language: English
• Pages: 1091-1094
• Publication/Series: Microelectronic Engineering
• Volume: 88
• Links: http://dx.doi.org/10.1016/j.mee.2011.03.087
• Document type: Conference paper
• Topic: Atom and Molecular Physics and Optics
• Conference name: 17th Conference on "Insulating Films on Semiconductors"
• Conference date: 2011-06-21 - 2011-06-24
• Conference place: Grenoble, France
• Status: Published
• Research group: Nano