The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Study of influence of domain structure on observed magnetoresistance anomalies in GaMnAs

På svenska

Author

  • Piotr Juszynski
  • Dariusz Wasik
  • Marta Gryglas-Borysiewicz
  • Janusz Sadowski

Summary, in English

Magneto-transport properties of a Ga0.93Mn0.07As ferromagnetic semiconductor film with strong epitaxial strain (Ga0.7In0.3As buffer) have been studied. The observed magnetoresistance showed peculiar peaks at the magnetic fields corresponding to magnetization switching probed by Hall voltage. Computer simulations showed that these anomalies could originate from the formation of complex, island-like magnetic domains, and their propagation in the sample.

Department/s

Publishing year

2013

Language

English

Pages

4-093708

Publication/Series

Applied Physics Reviews

Volume

113

Issue

9

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Physical Sciences
  • Natural Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 1931-9401