Circuits and devices with integrated VFETs and RTDs
Author
Summary, in English
We have realised a new technology for the integration of VFETs and RTDs. For these tunnelling transistors (so called resonant tunnelling permeable base transistors) we have developed large signal models which have been implemented in a Cadence simulation environment. The DC I-V characteristics are reproduced to a very high degree in these models. The models are further used for simulations of the behaviour of simple small-scale circuits including resonant tunnelling transistors. Examples of circuits studied are a monostable-bistable logic element and a ternary quantiser, where the later is based on a new 3D architecture of RTDs and VFETs
Publishing year
2002
Language
English
Pages
205-208
Publication/Series
2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353)
Document type
Conference paper
Publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
Topic
- Electrical Engineering, Electronic Engineering, Information Engineering
Keywords
- VFETs
- large signal models
- Cadence simulation environment
- DC I-V characteristics
- monostable-bistable logic element
- small-scale circuits
- 3D architecture
- ternary quantiser
- RTDs
- resonant tunnelling permeable base transistors
Status
Published
ISBN/ISSN/Other
- ISBN: 0-7803-7448-7