Magnetic anisotropy investigations of (Ga,Mn)As with a large epitaxial strain

Summary, in English

Magnetic properties of 20 nm thick (Ga,Mn)As layer deposited on (Ga,ln)As buffer with very large epitaxial tensile strain are investigated. Gal,In,As buffer with x=30% provides a 2% lattice mismatch, which is an important extension of the mismatch range studied so far (up to 0.5%). Evolution of magnetic anisotropy as a function of temperature is determined by magnetotransport measurements. Additionally, results of direct measurements of magnetization are shown. (C) 2015 Published by Elsevier B.V.

• Author: P. Juszynski; M. Gryglas-Borysiewicz; J. Szczytko; M. Tokarczyk; G. Kowalski; Janusz Sadowski; D. Wasik
• Department/s: MAX IV Laboratory
• Publishing year: 2015
• Language: English
• Pages: 48-52
• Publication/Series: Journal of Magnetism and Magnetic Materials
• Volume: 396
• Links: http://dx.doi.org/10.1016/j.jmmm.2015.07.077
• Document type: Journal article
• Publisher: Elsevier
• Topic: Condensed Matter Physics
• Keywords: Magnetic anisotropy; Spintronic; GaMnAs; Epitaxial pressure
• Status: Published
• ISBN/ISSN/Other: ISSN: 0304-8853