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Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V

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Author

Publishing year

2012

Language

English

Pages

195-196

Publication/Series

IEEE Electron Device Letters

Document type

Conference paper: abstract

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • Nanowire
  • Transistor
  • FET
  • MOSFET
  • InAs

Conference name

Device Research Conference (DRC), 2012 70th Annual

Conference date

2012-06-18

Conference place

University Park, PA, United States

Status

Published

Project

  • EIT_WWW Wireless with Wires

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0741-3106