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1/f-noise in Vertical InAs Nanowire Transistors

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Author

Summary, in English

The material quality at high-k interfaces are a major concern for FET devices. We study the effect on two types of InAs nanowire (NW) transistors and compare their characteristics. It is found that by introducing an inner layer of Al2O3 at the high-kappa interface, the low frequency noise (LFN) performance regarding gate voltage noise spectral density, S-Vg, is improved by one order of magnitude per unit gate area.

Publishing year

2013

Language

English

Pages

1-2

Publication/Series

2013 International Conference on Indium Phosphide and Related Materials (IPRM)

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • 1/f-noise
  • high-kappa
  • nanowire
  • InAs
  • FET

Conference name

25th International Conference on Indium Phosphide and Related Materials (IPRM)

Conference date

2013-05-19 - 2013-05-23

Conference place

Kobe, Japan

Status

Published

ISBN/ISSN/Other

  • ISSN: 1092-8669