The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

A luminescence study of doping effects in InP-based radial nanowire structures

På svenska

Author

Summary, in English

We have used micro-photo-and cathodo-luminescence at low temperatures to study the effects of sulphur doping in InP and radial InP/InAs/InP structured nanowires. Samples with pure wurtzite crystal structure, with modulated wurtzite/zincblende crystal structure and with different radial InAs growth times were investigated. We observed a doping concentration gradient along the nanowires, the location of segments of different crystal structure and thickness fluctuations on the monolayer scale of the InAs layer.

Publishing year

2013

Language

English

Publication/Series

18th Microscopy of Semiconducting Materials Conference (MSM XVIII)

Volume

471

Document type

Conference paper

Publisher

IOP Publishing

Topic

  • Condensed Matter Physics

Conference name

18th International Conference on Microscopy of Semiconducting Materials

Conference date

2013-04-07 - 2013-04-11

Status

Published

ISBN/ISSN/Other

  • ISSN: 1742-6588
  • ISSN: 1742-6596