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Effects of aluminum on epitaxial graphene grown on C-face SiC

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Author

  • Chao Xia
  • Leif I. Johansson
  • Yuran Niu
  • Lars Hultman
  • Chariya Virojanadara

Summary, in English

The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400 degrees C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500 degrees C to 700 degrees C induces formation of an ordered compound, producing a two domain root 7 x root 7R19 degrees LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800 degrees C, and at 1000 degrees C, Al is no longer possible to detect at the surface. On Si-face graphene, deposited Al layers did not form such an Al-Si-C compound, and Al was still detectable after annealing above 1000 degrees C. (C) 2015 Author(s).

Department/s

Publishing year

2015

Language

English

Publication/Series

Applied Physics Reviews

Volume

117

Issue

19

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Materials Chemistry

Status

Published

ISBN/ISSN/Other

  • ISSN: 1931-9401