Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s

Summary, in English

We have investigated the electronic transport through 3 mu m long, 45 nm diameter InAs nanowires comprising a 5 nm long InP segment as electronic barrier. After assembly of 12 nm long oligo(phenylene vinylene) derivative molecules onto these InAs/InP nanowires, we observed a pronounced, nonlinear I-V characteristic with significantly increased currents of up to 1 mu A at 1 V bias, for a back-gate voltage of 3 V. As supported by our model calculations based on a nonequilibrium Green Function approach, we attribute this effect to charge transport through those surface-bound molecules, which electrically bridge both InAs regions across the embedded InP barrier.

• Author: Muhammed Ihab Schukfeh; Kristian Storm; Ahmed Mahmoud; Roar R. Sondergaard; Anna Szwajca; Allan Hansen; Peter Hinze; Thomas Weimann; Sofia Fahlvik Svensson; Achyut Bora; Kimberly Dick Thelander; Claes Thelander; Frederik C. Krebs; Paolo Lugli; Lars Samuelson; Marc Tornow
• Department/s: Solid State Physics; Centre for Analysis and Synthesis; NanoLund: Centre for Nanoscience
• Publishing year: 2013
• Language: English
• Pages: 4111-4118
• Publication/Series: ACS Nano
• Volume: 7
• Issue: 5
• Links: http://dx.doi.org/10.1021/nn400380g
• Document type: Journal article
• Publisher: The American Chemical Society (ACS)
• Topic: Nano Technology
• Keywords: nanowires; heterostructure; InAs; molecular electronics; oligo(phenylene; vinylene)
• Status: Published
• ISBN/ISSN/Other: ISSN: 1936-086X