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Structural investigation of GaInP nanowires using X-ray diffraction

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Author

Summary, in English

In this work the structure of ternary GaxIn1-xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal-organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10 mu m are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements. (C) 2013 Elsevier B.V. All rights reserved.

Publishing year

2013

Language

English

Pages

100-105

Publication/Series

Thin Solid Films

Volume

543

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics

Keywords

  • Nanowires
  • X-ray diffraction
  • III-V semiconductors

Status

Published

ISBN/ISSN/Other

  • ISSN: 0040-6090