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Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators

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Author

Summary, in English

Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/mu m) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate the center frequency of the wavelets.

Publishing year

2013

Language

English

Pages

1-2

Publication/Series

2013 International Conference on Indium Phosphide and Related Materials (IPRM)

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • InGaAS MOSFET
  • RTD
  • wavelet generator
  • mm-Wave circuits

Conference name

25th International Conference on Indium Phosphide and Related Materials (IPRM)

Conference date

2013-05-19 - 2013-05-23

Conference place

Kobe, Japan

Status

Published

ISBN/ISSN/Other

  • ISSN: 1092-8669